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| SavantIC Semiconductor www..com Product Specification Silicon NPN Power Transistors 2SC1785 DESCRIPTION *With TO-3 package *High power dissipation APPLICATIONS *Power amplifier applications *Power switching applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 200 200 6 15 4 100 150 -55~150 UNIT V V V A A W SavantIC Semiconductor www..com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=50mA ;IB=0 IE=1mA ;IC=0 IC=10A; IB=1A IC=10A; IB=1A VCB=200V; IE=0 VEB=6V; IC=0 IC=5A ; VCE=4V 20 MIN 200 6 2SC1785 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE TYP. MAX UNIT V V 2.0 2.5 100 100 V V A A 2 SavantIC Semiconductor www..com Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1785 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
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